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AOD4100 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free*
Features
VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5m (VGS = 20V) RDS(ON) < 9m (VGS = 12V) RDS(ON) < 12m (VGS = 10V) 100% UIS Tested! 100% Rg Tested!
TO-252 D-PAK
Top View D
Bottom View D
G S S G S G
Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current C Avalanche Current
C
Maximum 25 30 50 49 120 28 118 50 25 6.5 4.2 -55 to 175
Units V V A A mJ W W C Max 19 52 3 Units C/W C/W C/W
VGS TC=25C
G
TC=100C
ID IDM IAR EAR PD PDSM
Repetitive avalanche energy L=0.3mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C
Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case D
Symbol RJA RJC
Typ 16 43 2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS= 30V VDS=VGS ID=250A VGS=12V, VDS=5V VGS=20V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=12V, ID=20A VGS=10V, ID=20A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 2 120 5.4 7.5 7.3 9.8 43 0.72 1 50 1100 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 420 200 0.8 20 VGS=10V, VDS=12.5V, ID=20A 17 6.5 6.8 9.5 VGS=10V, VDS=12.5V, RL=0.68, RGEN=0.6 IF=20A, dI/dt=100A/s 13.5 11.5 5.4 32 19 nC nC ns ns ns ns ns nC 1.5 24 1350 6.5 9 9 12 S V A pF pF pF nC m 3.2 Min 25 1 5 100 4 Typ Max Units V A nA V A
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on t<10s R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Re1: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 100 80 ID(A) 60 40 20 0 0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5 4 5 6 7 8 9 VGS(Volts) Figure 2: Transfer Characteristics VGS=8V 20 10V 60 12V ID(A) 20V 40 VDS=5V 80
125C 25C
11.0 10.0 9.0 RDS(ON) (m ) 8.0 7.0 6.0 5.0 4.0 0 5 10 15 20 25 30 VGS=20V VGS=12V VGS=10V Normalized On-Resistance
1.6 ID=20A VGS=20V
1.4
1.2 VGS=10V
VGS=12V
1
VGS=10V VGS=12V VGS=20V
0.8
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 18 16 ID=20A
1.0E+01 1.0E+00
14 RDS(ON) (m ) 12 10 8 6 4 2 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C
TC=100C TA=25C
125C
IS (A)
1.0E-01 1.0E-02
125C
25C
-55 to 175
1.0E-04 1.0E-05 0.0 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 1.0
1.0E-03
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 18 16 14 VGS (Volts) 12 10 8 6 4 2 0 0 5 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 35 VDS=12.5V ID=20A Capacitance (pF) 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Ciss
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited DC 10s 100 1ms 10ms
220 180 140 Power (W) 100 60 20 0.0001 TJ(Max)=175C TC=25C
0.1
1 VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 D=T on/T TJ,PK=T c+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient Thermal Resistance
TC=100C TA=25C
0.1 PD
-55 to 175
Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current Power Dissipation (W) 0.001 TA=25C 80 60 40 150C 20 0 0.00001 60 50 40 30 20 10 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
25C
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
100 80
Power (W)
60 40
20 0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H)
0.01
10 Z JA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=52C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
td(on) tr ton td(off) toff tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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